Authors: Suhas S Mohite Sawanta S Mali Rohini R Kharade Chang Kook Hong Dhanaji G Kanase Pramod S Patil Popatrao N Bhosale
Publish Date: 2015/02/17
Volume: 26, Issue: 5, Pages: 2879-2886
Abstract
In this paper we report a new approach for deposition of nanocrystalline MoBi2Se5 thin films using vacuum evaporation employing single source precursor synthesized by arrested precipitation technique As deposited and vacuum annealed MoBi2Se5 thin films were characterized for optostructural morphological compositional and electrochemical analysis It was observed that optical band gap decreases from 207 eV to 187 eV with vacuum annealing Xray diffraction studies confirm rhombohedral crystal structure of MoBi2Se5 thin films Scanning electron microscopy images show compact arrangement of spherical grains without pin holes Transmission electron microscopy TEM and high resolution transmission electron microscopy HRTEM results reveal nanocrystalline nature having particle size ~100 nm and selected area electron diffraction SAED pattern confirms rhombohedral crystal structure The compositional analysis done by XPS shows presence of Mo4+ Bi3+ and Se2− oxidation states confirming stoichiometric MoBi2Se5 thin film material The photoelectrochemical PEC parameters of as deposited and vacuum annealed thin films were recorded in 05 M aqueous polysulfide electrolyte Our PEC results show that 057 and 070 conversion efficiency for asdeposited and vacuum annealed samples respectivelyAuthors are thankful to University Grants Commission UGC New Delhi for providing infrastructural facilities This work was also supported by the Priority Research Centers Program through the National Research Foundation of Korea NRF funded by the Ministry of Education Science and Technology 2009–0094055
Keywords: