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Title of Journal: J Mater Sci Mater Electron

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Abbravation: Journal of Materials Science: Materials in Electronics

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Springer US

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DOI

10.1007/bf01182353

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1573-482X

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Effect of stacking type in precursors on compositi

Authors: Jun Liu Ai Xiang Wei Yu Zhao Zhi Qiang Yan
Publish Date: 2013/02/22
Volume: 24, Issue: 7, Pages: 2553-2557
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Abstract

The copperindiumgallium CIG metallic precursors with different stacking type A CuGa/CuIn/CuGa/glass and B CuInGa/CuIn/CuInGa/glass were prepared onto glass substrates by magnetron sputtering method In order to prepare CuIn1−xGaxSe2 CIGS thin films the CIG precursors were then selenized with solid Se powder using a threestep reaction temperature profile The influence of stacking type in precursors on structure composition morphology and electrical properties of the CIGS films is investigated by Xray diffraction energy dispersive spectrometer scanning electron microscope and Hall effect measurement The results reveal that the stacking type of the precursor has a strong influence on composition morphology and properties of the CIGS thin films The atomic ratios of Cu/In+Ga/Se of the CIGS films A and B are 1611211 and 1391204 respectively The better quality CIGS thin films can be obtained through selenization of metallic precursor of CuInGa/CuIn/CuInGa/glass The CIGS films are ptype semiconductor material The hole concentration resistivity and hole mobility of the CIGS thin films is 251 × 1017 cm−3 311 × 104 Ω cm and 198 cm2 V−1 s−1 respectively

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