Authors: Mariana Amorim Fraga Marcos Massi Ivo C Oliveira Homero S Maciel Sebastião G dos Santos Filho Ronaldo D Mansano
Publish Date: 2007/12/05
Volume: 19, Issue: 8-9, Pages: 835-840
Abstract
Silicon carbide thin films Si x C y were deposited in a RF 1356 MHz magnetron sputtering system using a sintered SiC target 995 purity In situ doping was achieved by introducing nitrogen into the electric discharge during the growth process of the films The N2/Ar flow ratio was adjusted by varying the N2 flow rate and maintaining constant the Ar flow rate The structure composition and bonds formed in the nitrogendoped Si x C y thin films were investigated by Xray diffraction XRD Rutherford backscattering spectroscopy RBS Raman spectroscopy and Fourier transform infrared spectrometry FTIR techniques RBS results indicate that the carbon content in the film decreases as the N2/Ar flow ratio increases Raman spectra clearly reveal that the deposited nitrogendoped SiC films are amorphous and exhibited C–C bonds corresponding to D and G bands After thermal annealing the films present structural modifications that were identified by XRD Raman and FTIR analysesThe financial support of CNPq is strongly acknowledged The authors also thank Dr Lúcia Vieira dos Santos Dr Gil Capote Rodriguez and Luis Francisco Bonetti for providing the facilities for the use Raman system at INPE and Dr Marcel Dupret from LAMFIUSP for the RBS measurements They also thank to technician Ronaldo from IAEAMR for the technical support in XRD analyses and to Dr Rita CLDutra e Dr Marta FKTakahashi from IAEAQI for FTIR analyses
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