Authors: Gourab Das Sourav Mandal Sukanta Dhar Sukanta Bose Sumita Mukhopadhyay Chandan Banerjee A K Barua
Publish Date: 2016/12/23
Volume: 28, Issue: 8, Pages: 5746-5753
Abstract
Light trapping is one of the fundamental necessities of thin film based solar cell for its performance elevation Back reflection of unused light of first pass is the key way to improve the light trapping phenomena In this study we have reported the development of ntype hydrogenated microcrystalline silicon oxide nµcSiOH layers of different characteristics The deposition has been done by Plasma Enhanced Chemical Vapor Deposition PECVD technique The detailed characterization of the films include the following 1 electrical properties 2 optical properties like E04 3 structural studies which include crystalline fraction by Raman spectroscopy and grain size by Xray diffraction measurement FTIR spectroscopy AFM and TEM studies nµcSiOH layer has been introduced as the nlayer of single junction p–i–n structure µcSi solar cells By various techniques the optimum use of nµcSiOH layer for enhancing the performance of µcSiH solar cells has been done It has been found that by using suitable bilayer of two different nµcSiOH layers it is possible to increase the solar cell performances The maximum efficiency obtained without any back reflector is 844 that is about 89 higher than that obtained by using nµcSiH layer as nlayer in the solar cellsThis work has been supported Ministry of New and Renewable Energy MNRE Govt of India Gourab Das gratefully acknowledges DSTINSPIRE Programme Division Govt of India for their financial support and Mr G Basak of IACS Kolkata for XRD measurements One of the authors Sourav Mandal is also acknowledging the University Grant Commission UGC for their support We thank Prof H Saha for his support in all aspects Authors would also like to thank Mr D Shome Technical Consultant for his excellent support in experimental deposition of thin films All the authors are acknowledging SSN Research Centre Chennai for their support in many aspects
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