Authors: H Naoi K Fujiwara S Takado M Kurouchi D Muto T Araki H Na Y Nanishi
Publish Date: 2007/09/11
Volume: 36, Issue: 10, Pages: 1313-1319
Abstract
Inrich In x Al1−x N films 047 ≤ x ≤ 1 were grown directly on nitridated 0001 sapphire substrates without employing a buffer layer by radiofrequency molecularbeam epitaxy Both photoluminescence peak energy and optical absorptionedge energy of the In x Al1−x N films decreased monotonically with increasing In composition which was consistent with the recently reported InN bandgap energies of ∼07 eV The bowing parameter of this alloy was estimated to lie between 29 eV and 62 eV Substrate nitridation with lower temperature and longer period conditions not only reduced misoriented In x Al1−x N phases remarkably but also produced narrower tilt distribution in the caxisoriented In x Al1−x N matrixThis work was supported by the Ministry of Education Culture Sports Science and Technology MEXT through a GrantinAid for Scientific Research A 18206003 the Academic Frontier Promotion Project and the 21st Century COE Program This work was also supported by the Innovation Plaza Kyoto of the Japan Science and Technology JST agency
Keywords: