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Title of Journal: Journal of Elec Materi

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Abbravation: Journal of Electronic Materials

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Springer US

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DOI

10.1016/0040-4020(80)80005-6

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1543-186X

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Effect of Eu Doping on the Structural Electrical

Authors: Lihua Zhang Shulin Wang Fanghua Liu
Publish Date: 2015/06/30
Volume: 44, Issue: 10, Pages: 3408-3414
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Abstract

The structural and dielectric properties of Eudoped K05Na05NbO3 KNN ceramics were investigated as a potential candidate for use in hightemperature capacitors with working temperature beyond 200°C xRay diffraction results showed that tetragonal and cubic structure distortions occurred for low and highconcentration doping respectively With increase of Eu content the dielectric anomaly of the tetragonal–cubic transition was depressed and shifted to low temperature while the temperature of the orthorhombic–tetragonal transition remained unchanged A dielectric relaxation associated with oxygen vacancies was detected in the paraelectric phase region The activation energy of oxygen vacancies depended on the Eu concentration and the defect compensation mechanism KNN doped with 3 mol Eu KNN3Eu showed good dielectric temperature stability ±10 with relatively high permittivity 1800 at 225°C over the temperature range from 119°C to 495°C representing a good starting point for development of hightemperature capacitor materials

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