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Title of Journal: Journal of Elec Materi

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Abbravation: Journal of Electronic Materials

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Springer US

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DOI

10.1016/0022-328x(85)87265-x

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1543-186X

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The Effect of Annealing in Controlled Vapor Pressu

Authors: HyoJung Kim JuHyuk Yim Won Chel Choi Chan Park JinSang Kim
Publish Date: 2012/02/11
Volume: 41, Issue: 6, Pages: 1519-1523
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Abstract

To investigate the effect of annealing in controlled atmosphere on the thermoelectric properties of BiTe film Tedeficient BiTe film was deposited by sputtering and then annealed with various BiTe alloy powders with different Te concentrations in a closed system at 250°C for 24 h BiTe phases other than Bi2Te3 in the asdeposited film could be removed when the film was annealed with BiTe source powder containing 62 at or higher content of Te At the same time the values of Seebeck coefficient and carrier concentration of the films approach −105 μV/K and 3 × 1019 cm−3 to 6 × 1019 cm−3 respectively This result indicates that mass transport of Te to the film takes place resulting in the formation of Bi2Te3 phase and reduction of the amount of ptype carriers due to compositional change of the film from Tedeficient to stoichiometric Annealing in controlled Tevapor atmosphere is an effective method to improve the thermoelectric properties of BiTe film by changing the composition and phase of Tedeficient film to stoichiometric Bi2Te3 film

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