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Title of Journal: Journal of Elec Materi

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Abbravation: Journal of Electronic Materials

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Springer US

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DOI

10.1007/s11458-006-0020-2

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1543-186X

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Optimization of Annealing Process for Improved InG

Authors: NC Das ML Reed AV Sampath H Shen M Wraback RM Farrell M Iza SC Cruz JR Lang NG Young Y Terao C J Neufeld S Keller S Nakamura SP DenBaars UK Mishra JS Speck
Publish Date: 2013/10/18
Volume: 42, Issue: 12, Pages: 3467-3470
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Abstract

We report enhanced performance of InGaN solar cells grown by metalorganic chemical vapor deposition through optimization of the annealing of the epitaxial wafer before device fabrication We varied the annealing environment gas mixtures as well as temperatures to obtain the optimized annealing condition It was found that the major improvement of the nitride solar cell efficiency after annealing is in the increase of the V oc In addition annealing at the reasonably moderate temperature of 550°C in O2 environment results in the highestefficiency InGaN solar cell devices compared with devices annealed at different temperatures and in different gas environments

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