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Title of Journal: Journal of Elec Materi

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Abbravation: Journal of Electronic Materials

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Springer US

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1543-186X

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Photoluminescence Studies of HgCdTe Epilayers

Authors: I C Robin M Taupin R Derone P Ballet A Lusson
Publish Date: 2010/04/21
Volume: 39, Issue: 7, Pages: 868-872
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Abstract

We studied the photoluminescence of Hg1−x Cd x Te x ≈ 03 layers grown by molecularbeam epitaxy on CdZnTe The investigations were carried out on unintentionally doped Indoped and Asdoped samples and the effect of different annealing procedures was examined Excitationpowerdependent and temperaturedependent comparative studies were performed The transition mechanisms are discussed and optical signatures for arsenic site transfer are found The contributions due to As2Te3 As in an amphoteric site Hg vacancies and AsHg complexes were identified and their ionization energies measured The results are consistent with results found by other techniques Thus it is shown that photoluminescence applied to Hg1−x Cd x Te can resolve characteristics corresponding to native and intentional donors/acceptors and offers a nondestructive fast tool for material characterization

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