Authors: M Carmody JG Pasko D Edwall E Piquette M Kangas S Freeman J Arias R Jacobs W Mason A Stoltz Y Chen NK Dhar
Publish Date: 2008/06/07
Volume: 37, Issue: 9, Pages: 1184-1188
Abstract
The use of silicon as an alternative substrate to bulk CdZnTe for epitaxial growth of HgCdTe for infrared detector applications is attractive because of potential cost savings as a result of the large available sizes and the relatively low cost of silicon substrates However the potential benefits of silicon as a substrate have been difficult to realize because of the technical challenges of growing lowdefectdensity HgCdTe on silicon where the lattice mismatch is ∼19 This is especially true for longwavelength infrared LWIR HgCdTe detectors where the performance can be limited by the high ∼5 × 106 cm−2 dislocation density typically found in HgCdTe grown on silicon The current status of LWIR 9 μm to 11 μm at 78 K HgCdTe on silicon focalplane arrays FPAs is reviewed Recent progress is covered including improvements in noise equivalent differential temperature NEDT and array operability NEDT of 25 mK and NEDT operability 99 are highlighted for 640 × 480 pixel 20μmpitch FPAs
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