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Title of Journal: Journal of Elec Materi

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Abbravation: Journal of Electronic Materials

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Springer US

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DOI

10.1007/978-1-4419-5692-7_40

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1543-186X

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Development of a Thermal Rectifier Usable at High

Authors: Tsunehiro Takeuchi Hiroki Goto Yasuhiro Toyama Takashi Itoh Masashi Mikami
Publish Date: 2011/03/11
Volume: 40, Issue: 5, Pages: 1129-1135
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Abstract

By using Albased metallic alloys characterized by a disordered structure and a narrow pseudogap of a few hundred meV in energy width persisting at the Fermi level we succeeded in preparing materials possessing a large increase of thermal conductivity with increasing temperature This unusual increase of thermal conductivity is caused by the electronic structure effect known as the bipolar diffusion effect BDE in the context of the twoband model A thermal rectifier was constructed using materials exhibiting the BDE By showing the thermal rectification of the bulk sample prepared in this study we demonstrate that our newly proposed idea of a thermal rectifier using the BDE is applicable for practical use

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  12. Device Characteristics of GaInSb/AlGaSb Quantum Well Lasers Monolithically Grown on GaAs Substrates by Using an Interfacial Misfit Array
  13. Solder Volume Effects on the Microstructure Evolution and Shear Fracture Behavior of Ball Grid Array Structure Sn-3.0Ag-0.5Cu Solder Interconnects
  14. Investigation of Structural and Electrical Properties of B-Site Complex Ion (Mg 1/3 Nb 2/3 ) 4+ -Modified High-Curie-Temperature BiFeO 3 -BaTiO 3 Ceramics
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