Authors: Rehana Zia Farhat Saleemi Madeeha Riaz Shahzad Nassem
Publish Date: 2016/07/07
Volume: 45, Issue: 10, Pages: 4762-4768
Abstract
ZnTe thin films have been prepared by an electronbeam evaporation technique on glass substrates changing the accelerating voltage and the substrate temperature at accelerating voltage of 2 kV Structural analysis showed that all the films had cubic structure with preferential orientation along 111 direction though 220 and 311 orientations were also present The 111 peak intensity increased with increasing film thickness The crystallite size increased with increasing film thickness Conductivity measurements showed that the films were ptype Films prepared at accelerating voltage of 2 kV exhibited minimum resistivity Optical characterization indicated that both absorbing and transparent thin films can be achieved by using different deposition conditions The optical bandgap value was found to vary with substrate temperature
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