Authors: Haruhiko Yoshida Shingo Kuge
Publish Date: 2010/03/04
Volume: 39, Issue: 6, Pages: 773-776
Abstract
A contactless Zerbst method has been developed to characterize the generation lifetime and the surface generation velocity of a semiconductor wafer This characterization is unaffected by the gate leakage current or the device fabrication process In this study this contactless Zerbst method was used to characterize the generation lifetime and the surface generation velocity of a partially Audoped Si wafer The results demonstrate that the contactless Zerbst method is a powerful technique for characterizing the generation lifetimes and the surface recombination velocities of semiconductor wafers
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