Authors: P Y Chien C H Yeh H H Hsu Albert T Wu
Publish Date: 2013/11/19
Volume: 43, Issue: 1, Pages: 284-289
Abstract
This study investigates electromigration in Bi2Te3 thermoelectric TE material systems and the effectiveness of the diffusion barrier under current The Peltier effect on the interfacial reaction was decoupled from the effect of electromigration After connecting p and ntype Bi2Te3 to Sn3Ag05Cu SAC305 solders different current densities were applied at varying temperatures The Bi2Te3 samples were fabricated by the spark plasma sintering technique and an electroless nickelphosphorous NiP layer was deposited at the solder/TE interfaces The experimental results confirm the importance of the Ni diffusion barrier in joint reliability Intermetallic compound layers CuNi6Sn5 and NiTe formed at the solder/NiP and NiP/substrate interfaces respectively The experimental results indicate that the mechanism of NiTe and CuNi6Sn5 compound growth was dominated by the Peltier effect at high current density When the current density was low the growth of NiTe was affected by electromigration but the changes of thickness for CuNi6Sn5 were not obviousThe help of Prof Jenq Gong Duh and Ms SY Tsai from National Tsing Hua University in performing EPMA is greatly appreciated The authors would also like to thank Prof Da Jeng Yao and Ms Huang from National Tsing Hua University for their help in performing the IR measurement This work was supported by the National Science Council NSC of Taiwan under Contract No NSC1012221E008026MY3
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