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Title of Journal: Journal of Elec Materi

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Abbravation: Journal of Electronic Materials

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Springer US

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DOI

10.1016/0002-9149(81)90234-4

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1543-186X

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Critical Thickness of ZnTe on GaSb211B

Authors: J Chai O C Noriega J H Dinan T H Myers
Publish Date: 2012/05/26
Volume: 41, Issue: 11, Pages: 3001-3006
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Abstract

An important parameter for heteroepitaxial material systems is the critical thickness h c To date for the material system ZnTe on GaSb agreement between experimental and theoretical values of h c has been poor In this paper we present results of an experimental study of h c for ZnTe layers on GaSb211B substrates based on a combination of highresolution xray diffraction and photoluminescence measurements Our experimentally determined h c value of 350 nm to 375 nm agrees well with the models of CohenSolal and Dunstan

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