Authors: A Bahari M Shahbazi
Publish Date: 2015/12/08
Volume: 45, Issue: 2, Pages: 1201-1209
Abstract
Organic–inorganic polyvinylpyrrolidone–silicon dioxide–3trimethoxysilylpropyl methacrylate PVP–SiO2–TMSPM hybrid solutions have been synthesized using the sol–gel process with different amounts of TMSPM as coupling agent and equivalent amounts of PVP and SiO2 Hybrid solutions were deposited on ptype Si111 substrates using the spin coating technique as a gate dielectric material for use in thinfilm transistors The structural properties of the samples were investigated using Fouriertransform infrared spectroscopy and xray diffraction analysis Atomic force microscopy and scanning electron microscopy techniques were applied to study the topography and morphology of the hybrid thinfilm samples Current–voltage I–V curves capacitance–voltage C–V measurements and the electrical properties of the organic hybrid thinfilm gate dielectrics were also studied in a metal–insulator/polymer–semiconductor structure According to the results the J GS curves in terms of V GS showed gate leakage current densities small enough for use as gate dielectric material at interface layers At V DS = 30 V in the saturation region I DS curves in terms of V GS presented higher charge carrier mobility μ FETS = 00584 cm2 s−1 V−1 due to lower dielectric constant k = 1143 in the sample with 005 weight ratio of TMSPM compared with other samples with different weight ratios of TMSPM
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