Authors: J Tatebayashi A Jallipalli MN Kutty SH Huang TJ Rotter G Balakrishnan LR Dawson DL Huffaker
Publish Date: 2008/08/22
Volume: 37, Issue: 12, Pages: 1758-1763
Abstract
We report the device characteristics of GaInSb/AlGaSb quantum well QW lasers monolithically grown on GaAs substrates by using an interfacial misfit IMF array The IMF array localized at the GaSb/GaAs interface can accommodate the 78 lattice mismatch between GaAs substrates and GaSb buffer layers resulting in the formation of a GaSb buffer with a very low defect density on GaAs substrates Toptop and topbottom metal contact methods are applied to the Ga09In01Sb/GaSb QW edgeemitting lasers monolithically grown on GaAs substrates for characterizing current–voltage I–V and output power–current L–I curves The potential drop at the IMF array of ~07 V is elucidated by comparing I–V characteristics with these two contact methods L–I characteristics and electroluminescence spectra shows roomtemperature lasing at 183 μm from a 125mmlong toptop contact device containing sixlayer Ga09In01Sb QWs with a threshold current density J th of 860 kA/cm2 This IMF technique will enable a wide range of lasing wavelengths from near to midwavelength infrared regimes on a GaAs platformThis work is supported by the Defense Advanced Research Projects Agency University Photonic Research Centers Dr Jagdeep Shah and the Air Force Office of Scientific Research Dr Gernot Pomrenke The authors would like to thank Dr M Mehta and AR Albrecht for their support of laser characterization
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