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Title of Journal: Journal of Elec Materi

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Abbravation: Journal of Electronic Materials

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Springer US

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DOI

10.1002/cyto.990140608

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1543-186X

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Current Transport in AlDiffused ZnO/Si Heterostru

Authors: YenJen Chen Chong Tong Juhyung Yun Wayne A Anderson
Publish Date: 2014/10/03
Volume: 44, Issue: 1, Pages: 96-102
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Abstract

The current–voltage–temperature IVT characteristics of transparent Aldoped ZnO AZO on nSi heterojunction structures were analyzed with respect to two different Al diffusion temperatures 200°C and 600°C Thin films of Al were deposited on top of the ZnO/Si structures followed by introducing the Al atoms into the ZnO to form AZO through a process of thermal diffusion Measurements at temperatures of 150–400 K were carried out in order to understand the temperature dependence of the heterostructure diode characteristics for photovoltaic applications The results indicated the difference in current mechanisms observed in the two diodes with different Aldiffusion temperatures and Al thicknesses The charge transport mechanism in the 200°C diodes indicated thermionic field emission TFE as the dominating mechanism whereas the 600°C diodes resulted in field emission FE as the dominating current transport The differences in conduction mechanisms explain the better solar cell performance using the 200°C process

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