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Title of Journal: Journal of Elec Materi

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Abbravation: Journal of Electronic Materials

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Springer US

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DOI

10.1002/ange.201509224

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1543-186X

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Correlation Between Oxygen Precipitation and Exten

Authors: Yuheng Zeng Xiangyang Ma Jiahe Chen Deren Yang
Publish Date: 2010/04/06
Volume: 39, Issue: 6, Pages: 648-651
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Abstract

Through an investigation of oxygen precipitation and extended defects in Czochralski silicon CZSi specimens subjected to different isothermal anneals by scanning infrared microscopy and preferential etching combined with optical microscopy the correlation between the sizes of oxygen precipitates and the generation of extended defects is revealed It is found that extended defects are generated when oxygen precipitates grow Afterward the sizes of extended defects increase while those of oxygen precipitates do not change significantly For the onset of the generation of extended defects we define the maximum size of oxygen precipitates as a critical size for the generation of extended defects Moreover it is revealed that this critical size decreases for higher annealing temperatures or more oxidizing ambients

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