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Title of Journal: Journal of Elec Materi

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Abbravation: Journal of Electronic Materials

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Springer US

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DOI

10.1007/s11248-011-9540-8

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1543-186X

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Investigation of Sn Whisker Growth in Electroplate

Authors: Jaewon Chang Sung K Kang JaeHo Lee KeunSoo Kim Hyuck Mo Lee
Publish Date: 2013/10/08
Volume: 43, Issue: 1, Pages: 259-269
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Abstract

Sn whiskers are becoming a serious reliability issue in Pbfree electronic packaging applications Among the numerous Sn whisker mitigation strategies minor alloying additions to Sn have been proven effective In this study several commercial Sn and SnAg baths of lowwhisker formulations are evaluated to develop optimum mitigation strategies for electroplated Sn and SnAg The effects of plating variables and storage conditions including plating thickness and current density on Sn whisker growth are investigated for matte Sn matte SnAg and bright SnAg electroplated on a Si substrate Two different storage conditions are applied an ambient condition 30°C dry air and a hightemperature/highhumidity condition 55°C 85 relative humidity Scanning electron microscopy is employed to record the Sn whisker growth history of each sample up to 4000 h Transmission electron microscopy xray diffraction and focused ion beam techniques are used to understand the microstructure the formation of intermetallic compounds IMCs oxidation the Sn whisker growth mechanism and other features In this study it is found that whiskers are observed only under ambient conditions for both thin and thick samples regardless of the current density variations for matte Sn However whiskers are not observed on SnAgplated surfaces due to the equiaxed grains and fine Ag3Sn IMCs located at grain boundaries In addition Sn whiskers can be suppressed under the hightemperature/highhumidity conditions due to the random growth of IMCs and the formation of thick oxide layers

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