Authors: İ Taşçıoğlu Ö Tüzün Özmen H M Şağban E Yağlıoğlu Ş Altındal
Publish Date: 2017/01/31
Volume: 46, Issue: 4, Pages: 2379-2386
Abstract
In this study poly3hexylthiophene66phenylC61butyric acid methyl ester 2356tetrafluoro7788tetracyanoquinodimethane P3HTPCBMF4TCNQ organic film was deposited on ntype silicon nSi substrate by spin coating method The electrical and dielectric analysis of Au/P3HTPCBMF4TCNQ/nSi Schottky barrier diode was conducted by means of capacitance–voltage C–V and conductancevoltage G/ω–V measurements in the frequency range of 10 kHz–2 MHz The C–V–f plots exhibit fairly large frequency dispersion due to excess capacitance caused by the presence of interface states N ss The values of N ss located in semiconductor bandgap at the organic film/semiconductor interface were calculated by Hill–Coleman method Experimental results show that dielectric constant ε′ and dielectric loss ε″ decrease with increasing frequency whereas loss tangent tanδ remains nearly the same The decrease in ε′ and ε″ was interpreted by the theory of dielectric relaxation due to interfacial polarization It is also observed that ac electrical conductivity σ ac and electric modulus M′ and M″ increase with increasing frequency
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