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Title of Journal: Journal of Elec Materi

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Abbravation: Journal of Electronic Materials

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Springer US

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DOI

10.1001/jama.287.18.2327

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1543-186X

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Thermoelectric Properties of the NarrowGap Interm

Authors: Yoshiki Takagiwa Junpei Tamura Okada Kaoru Kimura
Publish Date: 2011/03/01
Volume: 40, Issue: 5, Pages: 1067-1072
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Abstract

In this paper the effect of hole doping on the thermoelectric properties of the binary narrowgap semiconducting intermetallic compound Ga2Ru in the temperature range from 373 K to 973 K was investigated We synthesized sintered pellets by spark plasma sintering SPS after arcmelting and succeeded in preparing crackfree samples The maximum dimensionless figure of merit ZT max was 050 at 773 K for the sintered Ga2Ru alloy The temperature dependence of the electrical resistivity and its magnitude at 373 K dramatically changed from negative ~11000 μΩcm to positive ~200 μΩcm upon hole doping by the substitution of Re for Ru atoms Also the Seebeck coefficient at 373 K changed from 300 μV/K to 75 μV/K These changes were identified by the increase in carrier concentrations observed by Hall effect measurements In particular large power factors 20 mW/m K2 to 30 mW/m K2 were obtained over a wide temperature range from 373 K to 973 K upon Re substitution The lattice thermal conductivity beneficially decreased with increasing Re concentration as a result of an alloying effect

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