Authors: Thi Cuc Than Bao Thoa Bui Benjamin Wegmuller Minh Hieu Nguyen Lam Huong Hoang Ngoc Van Diep Bui Quoc Hung Nguyen Chi Hieu Hoang Thuat NguyenTran
Publish Date: 2016/02/10
Volume: 45, Issue: 5, Pages: 2407-2414
Abstract
One of the interesting forms of cuprous oxide and ferric oxide based materials is CuFeO2 which can be a delafossitetype compound and is a well known ptype semiconductor This compound makes up an interesting family of materials for technological applications CuFeO2 thin films recently gained renewed interest for potential applications in solar cell devices especially as absorption layers One of the interesting facts is that CuFeO2 is made from cheap materials such as copper and iron In this study CuFeO2 thin films are intentionally deposited on corning glass and silicon substrates by the radiofrequency and direct current sputtering method with complicated and well developed cosputtering recipes The deposition was performed at room temperature which leads to an amorphous phase with extremely low roughness and high density The films also were annealed at 500°C in 5 H2 in Ar for the passivation A detailed optical study was performed on these thin films by spectroscopic ellipsometry and by ultraviolet visible near infrared spectroscopy Depending on sputtering conditions the direct band gap was extrapolated to be from 196 eV to 22 eV and 292 eV to 296 eV and the indirect band gap is about 122 eV to 142 eV A good electrical conduction is also observed which is suitable␣for solar cell applications In future more study on the structural properties will be carried out in order to fully understand these materials
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