Authors: Soumen Mandal Ravi Kumar Arun Nagahanumaiah Nripen Chanda Surajit Das Pankaj Agarwal Jamil Akhtar Prabhash Mishra
Publish Date: 2014/10/24
Volume: 44, Issue: 1, Pages: 6-12
Abstract
Nanoparticlebased flexible fieldeffect transistors FETs containing carbon nanotubes CNTs and silicon nanowires SiNWs have attracted tremendous attention since their interesting device performance can be utilized for integrated nanoscale electronics However use of CNTs and SiNWs on polymer substrates poses serious limitations in terms of their fabrication procedure repeatability and biodegradability In this article we report for the first time the fabrication and characteristics of solutionprocessed FETs on a paper substrate doped with easily prepared silver nanoparticles AgNPs To compare the FET performance we fabricated two other FETs on paper containing ionic liquid IL 1butyl3methylimidazolium octyl sulfate and reduced graphene oxide rGO as dopants We observe that the AgNPbased dopant generated good FET characteristics in terms of linear transconductance variations and higher carrier concentration values showing negligible changes after bending and aging In comparison with the AgNPFET the rGO and ILbased dopants yielded high carrier mobilities but the rGObased FET is more susceptible to aging and bending The excellent linearity of the I DS–V G curve found for the AgNPFET ensures its applicability for devices requiring linear transfer characteristics such as linear amplifiers
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