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Title of Journal: Journal of Elec Materi

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Abbravation: Journal of Electronic Materials

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Springer US

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DOI

10.1002/macp.1972.021570121

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1543-186X

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Semiconducting Properties of Swift Au IonIrradiat

Authors: Sera Kwon HyunWoo Park KwunBum Chung
Publish Date: 2016/11/08
Volume: 46, Issue: 2, Pages: 1210-1214
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Abstract

The semiconducting properties of Au ionirradiated ZnO thin films were investigated as a function of ion irradiation dose at room temperature The Au ion irradiation was conducted with acceleration energy of 130 MeV in the ion dose range from 1 × 1011 to 5 × 1012 ions/cm2 The physical properties showed no change regardless of the Au ion irradiation dose however the electrical properties of Au ionirradiated ZnO thin films changed depending on the Au ion irradiation dose The electronic structure drastically changed with the evolution of hybridized molecular orbital structure for the conduction band and band edge states below the conduction band These remarkable changes in electronic structure correlate with changes in electrical properties such as carrier concentration and mobilityThis work was supported by the framework of the international cooperation program NRF2015K2A2A7056357 through a National Research Foundation of Korea funded by the Ministry of Science Information and Communications Technologies ICT and Future Planning and by Basic Science Research Program 2016R1A6A1A030 12877 through the National Research Foundation of Korea funded by the Ministry of Education

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