Authors: Najla M Khusayfan Hazem K Khanfar
Publish Date: 2016/12/20
Volume: 46, Issue: 3, Pages: 1650-1657
Abstract
In this study we concentrate on the design and characterization of the hybrid isotype Au Yb/ZnS/InSe/C devices The thin film devices that are prepared by using the vacuum deposition technique are characterized by means of xray diffraction energy dispersive xray analysis optical and dielectric spectroscopy current–voltage characteristics and impedance spectroscopy techniques The techniques allow determining the preferred crystallinity at the interfaces the lattice match/mismatch ratios the atomic compositions the energy band gap shifts the valence and conduction band offsets the barrier heights at the Schottky shoulders Au/ZnS and InSe/C of the hybrid structure and the plasmonic interaction at the ZnS/InSe and Au Yb/ZnS/InSe interfaces The hybrid isotype device is found to exhibit photosensing features presented by a responsivity of ∼20 A/W external quantum efficiencies EQE and internal quantum efficiencies IQE of 395 and 2493 at basing voltage of 03 V respectively In addition the dielectric spectra modeling reveals a plasmon–electron interaction of resonance frequencies in the range of 031–526 GHz and drift mobility of ∼212 cm2/Vs and 106 cm2/Vs for the Au/ZnS/InSe and Yb/ZnS/InSe respectively Moreover the impedance spectroscopy studies confirm the correctness of the dielectric modeling nominating the Yb/ZnS/InSe/C devices as photodetectors plasmon resonators and microwave cavities
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