Authors: M Jain SB Majumder RS Katiyar SB Desu
Publish Date: 2003/07/16
Volume: 77, Issue: 6, Pages: 789-792
Abstract
We have investigated the relations between microstructure and dielectric properties in order to fabricate solgelderived highly 100 oriented Ba05Sr05TiO3 BST 50/50 thin films with properties comparable to those of the bulk material For the first time we were able to fabricate BST thin films which exhibited the orthorhombictotetragonal transition in addition to the commonly observed tetragonaltocubic transition We were successful in explaining the commonly observed degradation of the dielectric behavior of BST thin films when compared to that of the bulk material in terms of grain size compositional inhomogeneity measured in terms of Sr/Ba ratio between the grain bulk and grain boundary and mechanical stresses
Keywords: