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Title of Journal: Appl Phys A

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Abbravation: Applied Physics A

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Springer Berlin Heidelberg

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ISSN

1432-0630

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Nearly flat terraced hydrogenterminated 1×1 1

Authors: GF Cerofolini C Galati G Giorgi A Motta S Reina L Renna A Terrasi
Publish Date: 2005/09/01
Volume: 81, Issue: 4, Pages: 745-751
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Abstract

A method is described for the preparation of devicequality nearly flat terraced hydrogenterminated 100 silicon The method requires heating at high temperature say 1100 °C in H2 cooling to moderate temperature 670–700 °C in the same ambient and quenching to room temperature in N2 Evidence that the process really results in the said surface is based on atomic force microscopy infrared absorption spectroscopy in the attenuated total reflection mode thermal programmed desorption reflection high energy electron diffraction and angleresolved Xray photoelectron spectroscopy

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