Authors: YJ Hsu SY Lu
Publish Date: 2005/08/01
Volume: 81, Issue: 3, Pages: 573-578
Abstract
Low temperature growth and dimension dependent photoluminescence PL efficiency of semiconductor nanowires were investigated with CdS as a model system The CdS nanowires were prepared with a simple low temperature metalorganic chemical vapor deposition MOCVD process via the vapor–liquid–solid VLS mechanism The low growth temperature of 360 °C was made possible with a newly developed singlesource precursor of CdS and by using sputtered Au as the catalyst for the VLS growth The length and diameter of the nanowires were adjusted by reaction time and sputtering conditions of Au respectively Nanowires of up to several μm in length and 20 to 200 nm in diameter were obtained The PL quantum yield of the nanowires was found to decrease with increasing wire length but to increase with decreasing wire diameter This dimensiondependent PL efficiency of onedimensional nanostructure unlikely resulting from the quantum size confinement effect appears to be a new observation that carries application significance
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