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Title of Journal: Appl Phys A

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Abbravation: Applied Physics A

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Springer-Verlag

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DOI

10.1007/978-94-011-2288-7_fm

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1432-0630

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Transparence and electrical properties of ZnObase

Authors: KuoSheng Kao ShangHao Chang PoTsung Hsieh ChihMing Wang DaLong Cheng
Publish Date: 2009/04/29
Volume: 96, Issue: 2, Pages: 529-533
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Abstract

Threelayered ZnO/Ag–Ti/ZnO structures were prepared using both the solgel technique and DC magnetron sputtering This study focuses on the electrical and optical properties of the ZnO/Ag–Ti/ZnO multilayers with various thicknesses of the Ag–Ti layer The ZnO thin film prepared by the sol–gel method was dried at 300°C for 3 minutes and a fixed thickness of 20 nm was obtained The thickness of the Ag–Ti thin film was controlled by varying the sputtering time The Ag–Ti layer substantially reduced the electrical resistivity of the sol–gelsprayed ZnO thin films The sheet resistance of the Ag–Ti layer decreased dramatically and then became steady beyond a sputtering time of 60 s The sputtering time of Ag–Ti thin film deposition was determined to be 60 s taking into account the optical transmittance Consequently the transmittance of the ZnO/Ag–Ti/ZnO multilayer films was 71 at 550 nm and 60 at 350 nm The sheet resistance was 42 Ω/sq

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