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Title of Journal: Appl Phys A

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Abbravation: Applied Physics A

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Springer Berlin Heidelberg

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DOI

10.1007/s10714-007-0539-7

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ISSN

1432-0630

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Rare earth doped αalumina thin films prepared by

Authors: G Wang O Marty C Garapon A Pillonnet W Zhang
Publish Date: 2004/09/01
Volume: 79, Issue: 4-6, Pages: 1599-1602
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Abstract

αAl2O3 films doped with about 1 Eu3+ were grown on sapphire 012 substrates by pulsed laser deposition using an ArF excimer laser under 104 mbar oxygen pressure and at temperatures higher than 1050 °C The Eu doping rate was measured by Rutherford backscattering spectroscopy The crystalline structure was determined by Xray diffraction and transmission electron microscopy The films are grown epitaxially on the sapphire substrate The Eu3+ fluorescence spectra are constituted of narrow lines By means of pulsed laser deposition Eu3+ ions may be introduced into a single site of the αphase lattice with a concentration that cannot be reached using conventional crystalgrowth methods

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