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Title of Journal: Appl Phys A

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Abbravation: Applied Physics A

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Springer Berlin Heidelberg

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DOI

10.1002/app.1965.070090103

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ISSN

1432-0630

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Optimization of dressedphoton–phononassisted ann

Authors: Jun Hyoung Kim Tadashi Kawazoe Motoichi Ohtsu
Publish Date: 2015/09/07
Volume: 121, Issue: 4, Pages: 1395-1401
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Abstract

Using the twolevel twostate model we analyzed the characteristics of enhanced electroluminescence intensity from a GaP LED fabricated by dressedphoton–phononassisted annealing In this model we utilized the fact that the adiabatic potential barrier of the electronic excited level in configuration space is lower than that of the ground level It was confirmed by experiments that in an actual excited level the barrier was reduced to 048 eV From this finding it was shown that the spatial distribution of Zn atoms can be changed by means of current injection and light irradiation even at room temperature In addition we showed that a structure that is suitable for light emission via DPPs is formed by means of a transition between a lowbarrier excited level and a highbarrier ground level due to stimulated emission Also regarding the optimized conditions for maximizing the effect of DPPassisted annealing it was found that the optimum ratio of the number of injected electrons to the number of irradiated photons is close to 1 and this was confirmed experimentally

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