Authors: SS Yi JS Bae BK Moon JH Jeong JH Kim
Publish Date: 2005/11/01
Volume: 81, Issue: 6, Pages: 1325-1328
Abstract
Sedoped ZnGa2O4Mn2+ thinfilm phosphors have been grown using a pulsed laser deposition technique at various growth conditions Structural characterization was carried out on a series of Sedoped ZnGa2O4Mn2+ films grown on Al2O30001 substrates using Znrich ceramic targets The results of Xray diffraction patterns showed that the lattice constants of the films decrease with the substitution of Se for the oxygen in the ZnGa2O4 Photoluminescence PL of Sedoped ZnGa2O4Mn2+ thin films has indicated that Al2O30001 is a promising substrate for the growth of highquality Sedoped ZnGa2O4Mn2+ films The emission spectra of Sedoped ZnGa2O4Mn2+ films show a broad band extending from 479 to 550 nm and peaking at 508 nm In particular the incorporation of Se into the ZnGa2O4 lattice could induce an increase in the PL The PL peak intensity of the Sedoped ZnGa2O4Mn2+ films is a factor of 28 larger than that of the ZnGa2O4Mn2+ films This phosphor is promising for applications in flatpanel displays
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