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Title of Journal: Appl Phys A

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Abbravation: Applied Physics A

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Springer Berlin Heidelberg

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DOI

10.1016/0013-4694(79)90311-0

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ISSN

1432-0630

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Ultrashort pulsed laser deposition of gallium ars

Authors: A De Bonis A Santagata A Galasso R Teghil
Publish Date: 2014/06/11
Volume: 117, Issue: 1, Pages: 275-280
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Abstract

A Gallium Arsenide target has been ablated by using a frequencydoubled Ndglass laser with a pulse duration of 250 fs and thin films have been deposited in vacuum The plasma produced by the ablation process and the deposited films have been studied by several different techniques including optical emission spectroscopy ICCD fast imaging and electron microscopies Xray diffraction Raman spectroscopy respectively The data evidence that the films which composition shows an excess of Ga are formed by the coalescence of a large number of nanoparticles These results even if the plasma does not evidence the presence of nanoparticles seem to indicate that the ablationdeposition mechanism is the same found for the majority of the other systems deposited by ultrashort pulse lasers

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