Authors: P Verardi F Craciun N Scarisoreanu G Epurescu M Dinescu I Vrejoiu A Dauscher
Publish Date: 2004/09/01
Volume: 79, Issue: 4-6, Pages: 1283-1285
Abstract
Thin films of Pb1xLaxZr065Ti0351x/4O3 with x=009 PLZT 9/65/35 have been grown by pulsed laser deposition PLD and by PLD assisted by radio frequency RF discharge in oxygen which increases the plasma reactivity and reduces the oxygen vacancies in films and at the filmbottom electrode interface Significant compositional structural and dielectric differences have been found among samples grown in the same deposition conditions excepting for RF power Films grown by RFassisted PLD have less pyrochlore and are more oriented For these films dielectric permittivity vs temperature variation was typical of relaxor ferroelectrics and the temperature of the dielectric maximum was close to that obtained in bulk but the permittivity value was much lower This was attributed mainly to the influence of a low permittivity interface layer and to the detrimental effect of pyrochlore phase still present in small quantities even in the films obtained by RFPLD The dielectric behavior of films grown without RF discharge was very different no dielectric anomaly was observed only a step increase above 180 °C Moreover much higher dielectric loss was measured for these films
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