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Title of Journal: Appl Phys A

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Abbravation: Applied Physics A

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Springer Berlin Heidelberg

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ISSN

1432-0630

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Spectroscopic ellipsometric characterization of or

Authors: C Himcinschi N Meyer S Hartmann M Gersdorff M Friedrich HH Johannes W Kowalsky M Schwambera G Strauch M Heuken DRT Zahn
Publish Date: 2005/02/01
Volume: 80, Issue: 3, Pages: 551-555
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Abstract

Thin films of Tris8hydroxyquinolinealuminumIII Alq3 and NN′Di1naphthylNN′diphenyl11′biphenyl44′diamine αNPD were deposited on largearea silicon substrates by means of the recently developed organic vapor phase deposition OVPD method Variableangle spectroscopic ellipsometry was used to measure the optical constants of OVPD Alq3 and αNPD layers in the 08–5 eV energy range The absorption onset which defines the lower limit of the optical band gap was found to be at ∼265 eV and ∼29 eV for Alq3 and αNPD respectively Additionally the thicknesses of the layers as well as the thickness profiles of the organic thin films were determined along the 8′′ diameter of the wafers The thickness analysis revealed largearea uniform deposition of the films

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