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Title of Journal: Appl Phys A

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Abbravation: Applied Physics A

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Springer-Verlag

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DOI

10.1016/0026-2714(71)90302-7

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1432-0630

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Structural and photoluminescence properties of ZnO

Authors: K Giannakopoulos N Boukos A Travlos T Monteiro MJ Soares M Peres A Neves MC Carmo
Publish Date: 2007/03/22
Volume: 88, Issue: 1, Pages: 41-44
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Abstract

Isolated self assembled ZnO nanoparticles are grown in two steps by the electron beam evaporation of Zn on oxidised silicon wafers during which isolated Zn nanodots are grown and a subsequent annealing in oxygen that results in the desired ZnO nanodots Low temperature PL measurements of the ZnO nanodots show that the near band edge part of the spectra is dominated by a zero phonon line near 336 eV which is an overlap of two emitting lines near 3363 eV and 3367 eV Characterization by TEM and EELS shows that the nanoparticles are zinc oxide single crystals grown with their caxis perpendicular to the substrate their distribution size and crystallinity depend on the deposition parameters of zinc and the growth substrate We discuss the effect of these parameters on the morphology of the resulting material Our approach demonstrates a simple method for the growth of high purity isolated ZnO nanodots of similar sizes distributed uniformly on a large surface

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