Authors: J K Rath
Publish Date: 2008/12/23
Volume: 96, Issue: 1, Pages: 145-
Abstract
Nanocrystalline silicon material has made rapid progress in the last several years and at present it can be defined as real device quality as a photoactive layer for solar cells A number of innovative ideas such as the deposition at the crystalline to amorphous transition at high pressure depletion condition by taming of the ion energy by grading of the material growth at reduced unwanted dopant incorporation have helped to reach an efficiency of 10 for single junction nanocrystalline silicon cells In situ plasma and gas phase diagnosis have contributed to the fast optimisation of deposition process parameters Deposition rate open circuit voltage and light confinement are some of most critical issues that are currently pursued Materials with a defect density as low as 1015 cm−3 have been made however they are still not good enough for n–p junctions the device structure is still of drift type in a p–i–n or n–i–p configurationThis article is published under an open access license Please check the Copyright Information section for details of this license and what reuse is permitted If your intended use exceeds what is permitted by the license or if you are unable to locate the licence and reuse information please contact the Rights and Permissions team
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