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Title of Journal: Appl Phys A

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Abbravation: Applied Physics A

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Springer-Verlag

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DOI

10.1016/0010-4655(88)90131-2

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1432-0630

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Comparison of VOSubscript2/Subscript thin film

Authors: Y Ningyi L Jinhua HLW Chan L Chenglu
Publish Date: 2003/03/28
Volume: 78, Issue: 5, Pages: 777-780
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Abstract

VO2 thin films with semiconductortometal phasetransition properties were prepared by inorganic solgel and IBED ionbeamenhanced deposition methods on SiO2/Si substrate The crystalline phase and the shape and width of the hysteresis curves of these VO2 films were significantly different For solgel VO2 films the transition started at close to 62 °C upon heating The temperature interval needed to complete the phase transition was 8 °C the ratio of resistance R20 °C/R80 °C reached three orders and the hysteresis width was 6 °C However the IBED film postannealed in Ar at 700 °C underwent a phase transition from 45 °C to 80 °C the ratio of resistance was more than two orders and the hysteresis width was 2 °C In addition the TCR temperature coefficient of resistance at 22 °C of the IBED film was 35/K much larger than the 07/K TCR of the solgel film

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