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Title of Journal: Appl Phys A

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Abbravation: Applied Physics A

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Springer-Verlag

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DOI

10.1007/s00585-997-0840-5

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1432-0630

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Comparative investigation of unipolar resistance s

Authors: Xinman Chen Guangheng Wu Wei Hu Hong Zhou Dinghua Bao
Publish Date: 2012/04/25
Volume: 108, Issue: 2, Pages: 503-508
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Abstract

Electrically induced unipolar resistance switching effects of Mg06Zn04O thin films with two top Pt electrodes MZOT and top and bottom Pt electrodes MZOB were demonstrated and compared for nonvolatile memory applications The obtained resistance ratios of highresistance states HRS to lowresistance states LRS for MZOB and MZOT devices were above seven and four orders of magnitude respectively and exhibited a slight degradation with voltage For both the devices the conduction mechanisms were dominated by ohmic conduction in LRS and trapcontrolled space charge limited current in HRS Furthermore a filamentary model was applied to explain the switching behaviors for both the devices considering the asymmetric interface defects and film thickness The results also suggest that resistance switching behaviors can be regulated by interface defect engineeringThe authors gratefully acknowledge financial support from the Natural Science Foundation of Guangdong Province China No 05003289 the Specialized Research Fund for the Doctoral Program of Higher Education of China Nos 20090171110007 and 20110171130004 NSFC Grant No 51172289 and the Natural Science Foundation of Shanghai China Grant No 11ZR1426700

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