Authors: MingKwei Lee ChihFeng Yen ShihChen Chiu
Publish Date: 2011/05/04
Volume: 104, Issue: 4, Pages: 1175-1180
Abstract
The electrical characteristics of thin TiO2 films prepared by metal–organic chemical vapor deposition grown on a ptype InP substrate were studied For a TiO2 film of 47 nm on InP without and with ammonium sulfide treatment the leakage currents are 88×10−2 and 11×10−4 A/cm2 at +2 V bias and 16×10−1 and 83×10−4 A/cm2 at −2 V bias The lower leakage currents of TiO2 with ammonium sulfide treatment arise from the improvement of interface quality The dielectric constant and effective oxide charge number density are 33 and 25×1013 cm2 respectively The lowest midgap interface state density is around 76×1011 cm−2 eV−1 The equivalent oxide thickness is 052 nm The breakdown electric field increases with decreasing thickness in the range of 25 to 76 nm and reaches 93 MV/cm at 25 nm
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