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Title of Journal: Appl Phys A

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Abbravation: Applied Physics A

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Springer-Verlag

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DOI

10.1006/rwfm.1999.0660

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1432-0630

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Interface of wet oxidized AlGaAs/GaAs distributed

Authors: RY Li ZG Wang B Xu P Jin X Guo M Chen
Publish Date: 2006/10/26
Volume: 86, Issue: 1, Pages: 19-22
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Abstract

The interface of wet oxidized Al097Ga003As/GaAs in a distributed Bragg reflector DBR structure has been studied by means of transmission electron microscopy and Raman spectroscopy With the extension of oxidation time the oxide/GaAs interfaces are not abrupt any more There is an amorphous film near the oxide/GaAs interface which is Ga2O3 related to the prolonged heating In the samples oxidized for 10 and 20 min there are some fissures along the oxidized AlGaAs/GaAs interfaces In the samples oxidized or in situ annealed for long time no such fissures are present due to the complete removal of the volatile products

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