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Title of Journal: Appl Phys A

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Abbravation: Applied Physics A

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Springer Berlin Heidelberg

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DOI

10.1007/s11295-015-0883-9

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1432-0630

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Generation and recombination in twodimensional bi

Authors: Behnaz Gharekhanlou Sina Khorasani
Publish Date: 2014/04/08
Volume: 115, Issue: 3, Pages: 737-740
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Abstract

We study the effects of recombination and generation process on the operation of bipolar junction transistor based on twodimensional materials and in particular graphone Here we use Shockley–Read–Hall model to study these process First we investigate the current–voltage characteristics of a graphone p–n junction considering generation and recombination process Then we calculate the estimated changes in current gain cutoff frequency and output characteristics of a graphone bipolar junction transistor designed in a recent study

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