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Title of Journal: Appl Phys A

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Abbravation: Applied Physics A

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Springer Berlin Heidelberg

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DOI

10.1002/zaac.19362270101

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ISSN

1432-0630

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Improved interfacial properties of SiOSubscript2

Authors: PT Lai JP Xu CX Li CL Chan
Publish Date: 2005/06/01
Volume: 81, Issue: 1, Pages: 159-161
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Abstract

The interface quality and reliability of gate oxides grown on n/ptype 6HSiC in diluted NO gas at 1150 °C are investigated As compared to conventional 100NO oxidation the dilutedNO 50 and 23 oxidations lead to lower interfacestate bordertrap and oxidecharge densities This is attributed to the fact that carbonaccumulation and carbonremoval rates are closer when oxidation is performed in diluted NO giving a smoother less disordered and strained interface Moreover less degradation of the dilutedNO samples than 100NO samples is observed during highfield stressing ±7 MV/cm indicating that stronger Si≡N bonds are created near/at the SiC/SiO2 interface for oxide grown in diluted NO ambient

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