Authors: YH Chu SJ Lin KS Liu IN Lin
Publish Date: 2005/10/01
Volume: 81, Issue: 5, Pages: 1059-1063
Abstract
Highperformance PbZrTiO3 PZT thin films were synthesized on Si substrates by using lowtemperature laserassisted processes which combine pulsed laser deposition PLD laser liftoff LLO and laserannealing LA processes The PZT films were first grown on sapphire substrates at 400 °C using BaMg1/3Ta2/3O3 BMT as seeding layer by the PLD process and were then transferred to Si substrates at room temperature by a LLO transferring process Utilization of the BMT layer is of critical importance in those processes since it acted as a nucleation layer for the synthesis of the PZT thin films on the sapphire substrates and at the same time served as a sacrificial layer during laser irradiation in the LLO process After the LLO process the surfaces of the PZT films were recovered by the LA process for removing the damage induced by the LLO process A thin BMT ∼30 nm layer is randomly oriented resulting in nontextured PZT films with good ferroelectric properties viz Pr=206 μC/cm2 and Ec=126 kV/cm whereas a thick BMT ∼100 nm layer is 100 preferentially oriented leading to 100textured PZT films with markedly better ferroelectric properties viz Pr=344 μC/cm2 and Ec=360 kV/cm
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