Authors: Ning Zhan Guoping Wang Jianlin Liu
Publish Date: 2011/09/28
Volume: 105, Issue: 2, Pages: 341-345
Abstract
Largearea epitaxial graphene films were grown on cobalt by thermal cracker enhanced gas source molecular beam epitaxy Growth conditions including growth temperature and growth time play important roles in the resulting morphology of asgrown films Highquality graphene films can be achieved in a small growth window Fast cooling rate was not required in this process due to direct growth mechanism under atomic carbon growth condition Largearea graphene films with high singlelayer and bilayer coverage of 93 were confirmed by Raman spectroscopy and transmission electron microscopy
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