Authors: B Kuppulingam G M Bhalerao Shubra Singh K Baskar
Publish Date: 2016/06/17
Volume: 122, Issue: 7, Pages: 667-
Abstract
Systematic reaction has been used to control the vapor–liquid–solid growth of gallium nitride nanowires NWs using different catalysts GaN NWs were grown using Cu Au Pd/Au alloy catalysts on cplane sapphire substrate XRD and Raman analysis revealed the crystalline wurtzite phase of GaN synthesized at 900 °C High density GaN NWs were studied using SEM and HRTEM Elemental composition and impurities were analyzed by EDX Diameter of individual NW grown using Au catalyst is found to be ~50 nm The diameter of NWs grown with the help of Cu catalyst was found to be ∼65 nm whereas with Pd/Au catalyst the diameter was about 100–200 nm NBE emission observed from PL spectra for Cu catalyst 377 nm Au catalyst 372 nm as well as Pd/Au catalyst 385 nm growth of GaN NWs respectively has been presented and discussed
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