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Title of Journal: Appl Phys A

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Abbravation: Applied Physics A

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Springer Berlin Heidelberg

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DOI

10.1007/bf02918665

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ISSN

1432-0630

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Photoluminescence spectra of doped GaAs films

Authors: Y Fu M Willander GB Chen YL Ji W Lu
Publish Date: 2004/08/01
Volume: 79, Issue: 3, Pages: 619-623
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Abstract

We have studied the dependence of the photoluminescence PL spectrum on the doping level and the film thickness of nGaAs thin films both experimentally and theoretically It has been shown theoretically that modification of the PL spectrum of ptype material by ptype doping is very small due to the large valenceband hole effective mass The PL spectrum of ntype material is affected by two factors 1 the electron concentration which determines the Fermi level in the material 2 the thickness of the film due to reabsorption of the PL signal For the ntype GaAs thin films under current investigation the doping level as well as the film thickness can be very well calibrated by the PL spectrum when the doping level is less than 2×1018 cm3 and the film thickness is in the range of the penetration length of the PL excitation laser

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