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Title of Journal: Appl Phys A

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Abbravation: Applied Physics A

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Springer Berlin Heidelberg

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DOI

10.1002/nme.1620211014

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ISSN

1432-0630

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Controlled growth of highquality graphene using h

Authors: N Selvakumar B Vadivel D V Sridhara Rao S B Krupanidhi Harish C Barshilia
Publish Date: 2016/10/11
Volume: 122, Issue: 11, Pages: 943-
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Abstract

Highquality graphene was grown on polycrystalline copper Cu foils 1 cm × 1 cm using hotfilament chemical vapor deposition method The role of process parameters such as gas flow rates methane and hydrogen growth temperatures filament and substrate and durations on the growth of graphene was studied The process parameters were also optimized to grow monolayer bilayer and multilayer graphene in a controlled manner and a growth mechanism was deduced from the experimental results The presence of graphene on Cu foils was confirmed using Xray photoelectron spectroscopy microRaman spectroscopy fieldemission scanning electron microscopy FESEM and transmission electron microscopy TEM techniques FESEM micrographs clearly showed that the graphene starts nucleating as hexagonal islands and later evolves as dendritic lobeshaped islands with an increase in supersaturation The TEM images substantiate the growth of monolayer bilayer and multilayer graphene The I 2D/I G ratio = 2 confirmed the presence of the monolayer graphene and the absence of ‘D’ peak in the Raman spectrum indicated the high purity of graphene grown on Cu foils These results also show that the polycrystalline copper foil morphology has negligible effect on the growth of monolayer graphene

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