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Title of Journal: Appl Phys A

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Abbravation: Applied Physics A

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Springer Berlin Heidelberg

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DOI

10.1016/0016-0032(52)90670-4

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ISSN

1432-0630

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Passivation of InAs/GaSb type II superlattice phot

Authors: Li Xue Zhang Wei Guo Sun Xiang Feng Zhang Xu Bo Zhu Xian Cun Cao Jun Jie Si
Publish Date: 2014/04/24
Volume: 117, Issue: 2, Pages: 853-856
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Abstract

One of the major challenges faced by antimonidebased devices is a result of the large number of surface states that are generated Surface passivation and subsequent capping of the surfaces are essential for any practical applicability of this material system as evidenced by the comparison of unpassivated and passivated InAs/GaSb superlattice midinfrared photodiodes herein The surface passivation methods include silicon dioxide SiO2 coating after anodic sulfide SiO2 coating after anodic oxide SiO2 coating only zinc sulfide ZnS coating after anodic sulfide and ZnS coating after ammonium sulfide NH42S chemical passivation The leakage current as a function of bias voltage I–V for superlattice diodes obtained using different passivation methods has been examined at 77 K The best performance was demonstrated by the SiO2 after anodic sulfide passivation The leakage current of the passivated diode is four orders of magnitudes less than that of the unpassivated diode

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